Study Shows LEAP Microscope Effective in SemiConductor Testing
August 2, 2005
In a study published in Applied Physics Letters, Imago Scientific Instruments' LEAP microscope was used to pinpoint individual atoms of boron in semiconductors, representing the first practical application of LEAP to semiconductors. LEAP revealed, in precise, 3-D detail, that boron spreads into the crevices between crystals of silicon on the transistors, possibly leading to electrical failure. The information allows semiconductor manufacturers to further investigate rapid-heating techniques for limiting this diffusion, while continuing the push to miniaturize chip components. Read more about the study at PhysOrg.com.
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